发明授权
- 专利标题: Semiconductor surface light-emitting element and method of manufacturing thereof
- 专利标题(中): 半导体表面发光元件及其制造方法
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申请号: US13812561申请日: 2011-06-21
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公开(公告)号: US08693516B2公开(公告)日: 2014-04-08
- 发明人: Kazuyoshi Hirose , Shinichi Furuta , Akiyoshi Watanabe , Takahiro Sugiyama , Kousuke Shibata , Yoshitaka Kurosaka , Susumu Noda
- 申请人: Kazuyoshi Hirose , Shinichi Furuta , Akiyoshi Watanabe , Takahiro Sugiyama , Kousuke Shibata , Yoshitaka Kurosaka , Susumu Noda
- 申请人地址: JP Hamamatsu-shi, Shizuoka JP Kyoto-shi, Kyoto
- 专利权人: Hamamatsu Photonics K.K.,Kyoto University
- 当前专利权人: Hamamatsu Photonics K.K.,Kyoto University
- 当前专利权人地址: JP Hamamatsu-shi, Shizuoka JP Kyoto-shi, Kyoto
- 代理机构: Drinker Biddle & Reath LLP
- 优先权: JP2010-172578 20100730
- 国际申请: PCT/JP2011/064181 WO 20110621
- 国际公布: WO2012/014604 WO 20120202
- 主分类号: H01S5/183
- IPC分类号: H01S5/183
摘要:
A semiconductor surface light-emitting element of this invention is provided with a photonic crystal layer 6 obtained by periodically forming a plurality of holes H in a basic layer 6A comprised of a first compound semiconductor of the zinc blend structure and growing embedded regions 6B comprised of a second compound semiconductor of the zinc blend structure, in the holes H, and an active layer 4 to supply light to the photonic crystal layer 6, in which a principal surface of the basic layer 6A is a (001) plane and in which side faces of each hole H have at least three different {100} facets.