Invention Grant
- Patent Title: Magnetic field assisted deposition
- Patent Title (中): 磁场辅助沉积
-
Application No.: US13410545Application Date: 2012-03-02
-
Publication No.: US08697198B2Publication Date: 2014-04-15
- Inventor: Sang In Lee
- Applicant: Sang In Lee
- Applicant Address: US CA Fremont
- Assignee: Veeco ALD Inc.
- Current Assignee: Veeco ALD Inc.
- Current Assignee Address: US CA Fremont
- Agency: Fenwick & West LLP
- Main IPC: C23C16/50
- IPC: C23C16/50 ; C23C16/455

Abstract:
Embodiments relate to applying a magnetic field across the paths of injected polar precursor molecules to cause spiral movement of the precursor molecules relative to the surface of a substrate. When the polar precursor molecules arrive at the surface of the substrate, the polar precursor molecules make lateral movements on the surface due to their inertia. Such lateral movements of the polar precursor molecules increase the chance that the molecules would find and settle at sites (e.g., nucleation sites, broken bonds and stepped surface locations) or react on the surface of the substrate. Due to the increased chance of absorption or reaction of the polar precursor molecules, the injection time or injection iterations may be reduced.
Public/Granted literature
- US20120251738A1 MAGNETIC FIELD ASSISTED DEPOSITION Public/Granted day:2012-10-04
Information query
IPC分类: