发明授权
- 专利标题: Semiconductor device manufacturing methods
- 专利标题(中): 半导体器件制造方法
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申请号: US13081377申请日: 2011-04-06
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公开(公告)号: US08697339B2公开(公告)日: 2014-04-15
- 发明人: Haoren Zhuang , Chong Kwang Chang , Alois Gutmann , Jingyu Lian , Matthias Lipinski , Len Yuan Tsou , Helen Wang
- 申请人: Haoren Zhuang , Chong Kwang Chang , Alois Gutmann , Jingyu Lian , Matthias Lipinski , Len Yuan Tsou , Helen Wang
- 申请人地址: US NY Armonk KR Suwon-Si, Gyeonggi-Do DE Neubiberg
- 专利权人: International Business Machines Corporation,Samsung Electronics Co., Ltd.,Infineon Technologies AG
- 当前专利权人: International Business Machines Corporation,Samsung Electronics Co., Ltd.,Infineon Technologies AG
- 当前专利权人地址: US NY Armonk KR Suwon-Si, Gyeonggi-Do DE Neubiberg
- 代理机构: Slater & Matsil, L.L.P.
- 主分类号: G03F7/20
- IPC分类号: G03F7/20
摘要:
Methods for manufacturing semiconductor devices are disclosed. One preferred embodiment is a method of processing a semiconductor device. The method includes providing a workpiece having a material layer to be patterned disposed thereon. A masking material is formed over the material layer of the workpiece. The masking material includes a lower portion and an upper portion disposed over the lower portion. The upper portion of the masking material is patterned with a first pattern. A polymer material is disposed over the masking material. The masking material and the polymer layer are used to pattern the material layer of the workpiece.
公开/授权文献
- US20110183266A1 Semiconductor Device Manufacturing Methods 公开/授权日:2011-07-28