Invention Grant
- Patent Title: Thin film transistor with increased doping regions
- Patent Title (中): 掺杂区域增加的薄膜晶体管
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Application No.: US13629531Application Date: 2012-09-27
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Publication No.: US08704232B2Publication Date: 2014-04-22
- Inventor: Abbas Jamshidi Roudbari , Cheng-Ho Yu , Shih Chang Chang , Ting-Kuo Chang
- Applicant: Apple Inc.
- Applicant Address: US CA Cupertino
- Assignee: Apple Inc.
- Current Assignee: Apple Inc.
- Current Assignee Address: US CA Cupertino
- Agency: Brownstein Hyatt Farber Schreck, LLP
- Main IPC: H01L29/10
- IPC: H01L29/10

Abstract:
A transistor that may be used in electronic displays to selectively activate one or more pixels. The transistor includes a metal layer, a silicon layer deposited on at least a portion of the metal layer, the silicon layer includes an extension portion that extends a distance past the metal layer, and at least three lightly doped regions positioned in the silicon layer. The at least three lightly doped regions have a lower concentration of doping atoms than other portions of the silicon layer forming the transistor.
Public/Granted literature
- US20130328053A1 Thin Film Transistor with Increased Doping Regions Public/Granted day:2013-12-12
Information query
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