Invention Grant
US08705275B2 Non-volatile memory device and method for programming non-volatile memory device
有权
用于编程非易失性存储器件的非易失性存储器件和方法
- Patent Title: Non-volatile memory device and method for programming non-volatile memory device
- Patent Title (中): 用于编程非易失性存储器件的非易失性存储器件和方法
-
Application No.: US13599022Application Date: 2012-08-30
-
Publication No.: US08705275B2Publication Date: 2014-04-22
- Inventor: Hyun-Seok Kim , Sung-Bin Kim , Sung-Hwan Bae , Jong-Nam Baek , Sang-Hoon Lee
- Applicant: Hyun-Seok Kim , Sung-Bin Kim , Sung-Hwan Bae , Jong-Nam Baek , Sang-Hoon Lee
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2011-0121810 20111121
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G11C16/06

Abstract:
A method for programming a non-volatile memory device includes: providing a non-volatile memory device including data cells capable of storing N-bit data (N is a natural number) and a monitoring cell capable of monitoring whether the N-bit data has been programmed into the data cells; performing a first programming operation for the data cells while inhibiting programming of the monitoring cell; and performing a second programming operation for the monitoring cell while inhibiting programming of the data cells, wherein the second programming operation is performed differently from the first programming.
Public/Granted literature
- US20130128663A1 NON-VOLATILE MEMORY DEVICE AND METHOD FOR PROGRAMMING NON-VOLATILE MEMORY DEVICE Public/Granted day:2013-05-23
Information query