公开(公告)号：US20130080858A1

公开(公告)日：2013-03-28

申请号：US13429326

申请日：2012-03-24

Applicant: Sang Hoon Lee ,  Sung-Hwan Bae ,  Jong-Nam Baek ,  Hyun Seok Kim ,  Sung Bin Kim

Inventor： Sang Hoon Lee ,  Sung-Hwan Bae ,  Jong-Nam Baek ,  Hyun Seok Kim ,  Sung Bin Kim

IPC: G11C29/04 ,  G06F11/16 ,  G06F12/00

CPC classification number: G11C11/5642 ,  G11C16/10 ,  G11C16/26 ,  G11C16/349

Abstract: Methods of performing a read retry, including reading a non-volatile memory with new read parameters, and devices for performing such methods are disclosed. The read retry operation and/or subsequent read retry operation may be initiated and/or completed before it is determined that such read retry operation is warranted. For example, a page of a NAND flash memory may be read in a read retry operation with new read voltage levels applied to a word line of the page. For example, a read retry operation may be performed on a target page prior to determining errors of a previous read page of data of the target page are uncorrectable via an ECC operation.

Abstract translation: 公开了执行读取重试的方法，包括读取具有新的读取参数的非易失性存储器以及用于执行这些方法的设备。 在确定这样的重试操作是有必要的之前，可以启动和/或完成读取重试操作和/或后续读取重试操作。 例如，可以在读取重试操作中读取NAND闪存的页面，其中新的读取电压电平施加到页面的字线。 例如，可以在确定目标页面的先前读取页面的数据的错误经由ECC操作不可校正之前，在目标页面上执行读取重试操作。

公开(公告)号：US20130128663A1

公开(公告)日：2013-05-23

申请号：US13599022

申请日：2012-08-30

Applicant: HYUN-SEOK KIM ,  SUNG-BIN KIM ,  SUNG-HWAN BAE ,  JONG-NAM BAEK ,  SANG-HOON LEE

Inventor： HYUN-SEOK KIM ,  SUNG-BIN KIM ,  SUNG-HWAN BAE ,  JONG-NAM BAEK ,  SANG-HOON LEE

IPC: G11C16/10 ,  G11C16/04

CPC classification number: G11C16/04 ,  G11C11/5628 ,  G11C16/10 ,  G11C2211/5646

Abstract: A method for programming a non-volatile memory device includes: providing a non-volatile memory device including data cells capable of storing N-bit data (N is a natural number) and a monitoring cell capable of monitoring whether the N-bit data has been programmed into the data cells; performing a first programming operation for the data cells while inhibiting programming of the monitoring cell; and performing a second programming operation for the monitoring cell while inhibiting programming of the data cells, wherein the second programming operation is performed differently from the first programming.

Abstract translation: 一种用于编程非易失性存储器件的方法包括：提供包括能够存储N位数据（N为自然数）的数据单元的非易失性存储器件以及能够监视N位数据是否具有 被编程到数据单元中; 对所述数据单元执行第一编程操作，同时禁止所述监视单元的编程; 以及在禁止所述数据单元的编程的同时对所述监视单元执行第二编程操作，其中所述第二编程操作与所述第一编程不同。

公开(公告)号：US20130036261A1

公开(公告)日：2013-02-07

申请号：US13564076

申请日：2012-08-01

Applicant: Hyun Seok Kim ,  Sung Bin Kim ,  Sung-Hwan Bae ,  Jong-Nam Baek ,  Sang Hoon Lee

Inventor： Hyun Seok Kim ,  Sung Bin Kim ,  Sung-Hwan Bae ,  Jong-Nam Baek ,  Sang Hoon Lee

IPC: G06F12/00

CPC classification number: G06F13/16 ,  G06F11/00 ,  G06F11/1048 ,  G06F11/1076 ,  G11C16/26 ,  G11C16/349

Abstract: A method for operating a memory controller capable of controlling a maximum count of a read retry operation is disclosed. The method includes programming a first real time clock (RTC) value indicating a time-of-day when a program operation is performed when the program operation for programming a data to a storage region of a non-volatile memory, obtaining information for the storage region by using the first RTC value read from the non-volatile memory and a second RTC value indicating a time-of-day when a read operation is performed, when the read operation for the data programmed to the storage region is performed, and decreasing a maximum count of a read retry operation by using the information, when the read retry operation is performed for the storage region.

Abstract translation: 公开了一种用于操作能够控制读取重试操作的最大计数的存储器控​​制器的方法。 该方法包括编程第一实时时钟（RTC）值，其指示在将数据编程到非易失性存储器的存储区域的程序操作时执行程序操作的时间，获得用于存储的信息 通过使用从非易失性存储器读取的第一RTC值和表示执行读取操作的时间的第二RTC值，执行对存储区域的编程的数据的读取操作，并且减少 当对存储区域执行读取重试操作时，通过使用该信息的重试操作的最大计数。

公开(公告)号：US08990535B2

公开(公告)日：2015-03-24

申请号：US13564076

申请日：2012-08-01

Applicant: Hyun Seok Kim ,  Sung Bin Kim ,  Sung-Hwan Bae ,  Jong-Nam Baek ,  Sang Hoon Lee

Inventor： Hyun Seok Kim ,  Sung Bin Kim ,  Sung-Hwan Bae ,  Jong-Nam Baek ,  Sang Hoon Lee

IPC: G06F12/00 ,  G06F13/16 ,  G06F11/00 ,  G06F11/10 ,  G11C16/26 ,  G11C16/34

CPC classification number: G06F13/16 ,  G06F11/00 ,  G06F11/1048 ,  G06F11/1076 ,  G11C16/26 ,  G11C16/349

Abstract: A method for operating a memory controller capable of controlling a maximum count of a read retry operation is disclosed. The method includes programming a first real time clock (RTC) value indicating a time-of-day when a program operation is performed when the program operation for programming a data to a storage region of a non-volatile memory, obtaining information for the storage region by using the first RTC value read from the non-volatile memory and a second RTC value indicating a time-of-day when a read operation is performed, when the read operation for the data programmed to the storage region is performed, and decreasing a maximum count of a read retry operation by using the information, when the read retry operation is performed for the storage region.

Abstract translation: 公开了一种用于操作能够控制读取重试操作的最大计数的存储器控​​制器的方法。 该方法包括编程第一实时时钟（RTC）值，其指示在将数据编程到非易失性存储器的存储区域的程序操作时执行程序操作的时间，获得用于存储的信息 通过使用从非易失性存储器读取的第一RTC值和表示执行读取操作的时间的第二RTC值，执行对存储区域的编程的数据的读取操作，并且减少 当对存储区域执行读取重试操作时，通过使用该信息的重试操作的最大计数。

公开(公告)号：US08705275B2

公开(公告)日：2014-04-22

申请号：US13599022

申请日：2012-08-30

Applicant: Hyun-Seok Kim ,  Sung-Bin Kim ,  Sung-Hwan Bae ,  Jong-Nam Baek ,  Sang-Hoon Lee

Inventor： Hyun-Seok Kim ,  Sung-Bin Kim ,  Sung-Hwan Bae ,  Jong-Nam Baek ,  Sang-Hoon Lee

IPC: G11C16/04 ,  G11C16/06

CPC classification number: G11C16/04 ,  G11C11/5628 ,  G11C16/10 ,  G11C2211/5646

Abstract: A method for programming a non-volatile memory device includes: providing a non-volatile memory device including data cells capable of storing N-bit data (N is a natural number) and a monitoring cell capable of monitoring whether the N-bit data has been programmed into the data cells; performing a first programming operation for the data cells while inhibiting programming of the monitoring cell; and performing a second programming operation for the monitoring cell while inhibiting programming of the data cells, wherein the second programming operation is performed differently from the first programming.

Abstract translation: 一种用于编程非易失性存储器件的方法包括：提供包括能够存储N位数据（N为自然数）的数据单元的非易失性存储器件以及能够监视N位数据是否具有 被编程到数据单元中; 对所述数据单元执行第一编程操作，同时禁止所述监视单元的编程; 以及在禁止所述数据单元的编程的同时对所述监视单元执行第二编程操作，其中所述第二编程操作与所述第一编程不同。