Invention Grant
US08705299B2 Replacing defective memory blocks in response to external addresses
有权
更换有缺陷的内存块以响应外部地址
- Patent Title: Replacing defective memory blocks in response to external addresses
- Patent Title (中): 更换有缺陷的内存块以响应外部地址
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Application No.: US13894543Application Date: 2013-05-15
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Publication No.: US08705299B2Publication Date: 2014-04-22
- Inventor: Vishal Sarin , Dzung H. Nguyen , William H. Radke
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Leffert Jay & Polglaze, P.A.
- Main IPC: G11C7/00
- IPC: G11C7/00

Abstract:
An apparatus has a controller. The controller is configured to address a non-defective memory block of a sequence of memory blocks in place of a defective memory block of the sequence of memory blocks such that the non-defective memory block replaces the defective memory block. The non-defective memory block is a proximate non-defective memory block following the defective memory block in the sequence of memory blocks that is available to replace the defective memory block. The controller is configured to apply a voltage-delay correction to the non-defective memory block that replaces the defective memory block based on the actual location of the non-defective memory block.
Public/Granted literature
- US20130250707A1 REPLACING DEFECTIVE MEMORY BLOCKS IN RESPONSE TO EXTERNAL ADDRESSES Public/Granted day:2013-09-26
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