发明授权
- 专利标题： 3D structured memory devices and methods for manufacturing thereof
- 专利标题（中）： 3D结构化存储器件及其制造方法
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申请号： US13234422申请日： 2011-09-16
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公开(公告)号： US08709894B2公开(公告)日： 2014-04-29
- 发明人: Ki Hong Lee , Seung Ho Pyi , Il Young Kwon , Jin Ho Bin
- 申请人： Ki Hong Lee , Seung Ho Pyi , Il Young Kwon , Jin Ho Bin
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： Schwegman, Lundberg & Woessner, P.A.
- 主分类号： H01L21/336
- IPC分类号： H01L21/336
摘要：
A 3D structured nonvolatile semiconductor memory devices and methods for manufacturing are disclosed. One such device includes an n+ region at a source/drain region; a p+ region at the source/drain region; and a diffusion barrier material between the n+ region and the p+ region. The n+ region is substantially isolated from the p+ region.
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