发明授权
- 专利标题： Fabrication method of semiconductor device and fabrication method of dynamic threshold transistor
- 专利标题（中）： 半导体器件的制造方法和动态阈值晶体管的制造方法
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申请号： US13552274申请日： 2012-07-18
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公开(公告)号： US08709898B2公开(公告)日： 2014-04-29
- 发明人: Masahiro Fukuda , Eiji Yoshida , Yosuke Shimamune
- 申请人： Masahiro Fukuda , Eiji Yoshida , Yosuke Shimamune
- 申请人地址： JP Yokohama
- 专利权人： Fujitsu Semiconductor Limited
- 当前专利权人： Fujitsu Semiconductor Limited
- 当前专利权人地址： JP Yokohama
- 代理机构： Westerman, Hattori, Daniels & Adrian, LLP
- 主分类号： H01L21/762
- IPC分类号： H01L21/762 ; H01L21/8238 ; H01L27/12 ; H01L29/06 ; H01L29/78
摘要：
A method includes: etching a silicon substrate except for a silicon substrate portion on which a channel region is to be formed to form first and second trenches respectively at a first side and a second side of the silicon substrate portion; filling the first and second trenches by epitaxially growing a semiconductor layer having etching selectivity against silicon and further a silicon layer; removing the semiconductor layer selectivity by a selective etching process to form voids underneath the silicon layer respectively at the first side and the second side of the substrate portion; burying the voids at least partially with a buried insulation film; forming a gate insulation film and a gate electrode on the silicon substrate portion; and forming a source region in the silicon layer at the first side of the silicon substrate portion and a drain region at the second side of the silicon substrate portion.
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