Invention Grant
- Patent Title: Semiconductor device manufacturing method and device for same
- Patent Title (中): 半导体装置制造方法及装置
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Application No.: US12937434Application Date: 2009-04-15
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Publication No.: US08709912B2Publication Date: 2014-04-29
- Inventor: Yuichi Urano , Kenichi Kazama
- Applicant: Yuichi Urano , Kenichi Kazama
- Applicant Address: JP Kawasaki-Shi
- Assignee: Fuji Electric Co., Ltd.
- Current Assignee: Fuji Electric Co., Ltd.
- Current Assignee Address: JP Kawasaki-Shi
- Agency: Rossi, Kimms & McDowell LLP
- Priority: JP2008-133977 20080522
- International Application: PCT/JP2009/057566 WO 20090415
- International Announcement: WO2009/142078 WO 20091126
- Main IPC: H01L21/30
- IPC: H01L21/30

Abstract:
Even when a substrate for treatment is joined with a supporting substrate having an outer shape larger than that of the substrate for treatment, with a photothermal conversion layer and an adhesive layer interposed, and the surface of the substrate for treatment on the side opposite this joined surface is treated, the occurrence of a defective external appearance on the treatment surface of the substrate for treatment is prevented.An adhesive layer 4 is formed on one surface of a substrate for treatment 3, a photothermal conversion layer 2 is formed on one surface of a supporting substrate 1 having a surface with an outer shape larger than that of the surface of the substrate for treatment, and the substrate for treatment 3 is bonded onto the surface of the photothermal conversion layer 2 with the adhesive layer 4 interposed, to obtain a layered member. This layered member is placed on a spin chuck 9 in a chamber 8 of a spin coater device, an alkaline aqueous solution 11 is dropped onto a portion 2a of the photothermal conversion layer 2 which protrudes from the substrate for treatment, and thereafter cleaning is performed on this portion using a high-pressure cleaning nozzle 12. Then, grinding, wet treatment, or similar treatment is performed on the surface of the substrate for treatment 3, to manufacture a semiconductor device.
Public/Granted literature
- US20110129989A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND DEVICE FOR SAME Public/Granted day:2011-06-02
Information query
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