发明授权
US08710549B2 MOS device for eliminating floating body effects and self-heating effects
有权
用于消除浮体效应和自发热效应的MOS器件
- 专利标题： MOS device for eliminating floating body effects and self-heating effects
- 专利标题（中）： 用于消除浮体效应和自发热效应的MOS器件
-
申请号： US13128439申请日： 2010-09-07
-
公开(公告)号： US08710549B2公开(公告)日： 2014-04-29
- 发明人: Xiaolu Huang , Jing Chen , Xi Wang , Deyuan Xiao
- 申请人： Xiaolu Huang , Jing Chen , Xi Wang , Deyuan Xiao
- 申请人地址： CN Shanghai
- 专利权人： Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Science
- 当前专利权人： Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Science
- 当前专利权人地址： CN Shanghai
- 代理机构： Global IP Services
- 代理商 Tianhua Gu
- 优先权： CN201010212134 20100625
- 国际申请： PCT/CN2010/076692 WO 20100907
- 国际公布： WO2011/160337 WO 20111229
- 主分类号： H01L29/66
- IPC分类号： H01L29/66
摘要：
A SOI MOS device for eliminating floating body effects and self-heating effects are disclosed. The device includes a connective layer coupling the active gate channel to the Si substrate. The connective layer provides electrical and thermal passages during device operation, which could eliminate floating body effects and self-heating effects. An example of a MOS device having a SiGe connector between a Si active channel and a Si substrate is disclosed in detail and a manufacturing process is provided.
公开/授权文献
信息查询
IPC分类:
