发明授权
- 专利标题： Method of manufacturing magnetic memory
- 专利标题（中）： 制造磁记忆体的方法
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申请号： US13226868申请日： 2011-09-07
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公开(公告)号： US08716034B2公开(公告)日： 2014-05-06
- 发明人: Yuichi Ohsawa , Shigeki Takahashi , Junichi Ito , Daisuke Saida , Kyoichi Suguro , Hiroaki Yoda
- 申请人： Yuichi Ohsawa , Shigeki Takahashi , Junichi Ito , Daisuke Saida , Kyoichi Suguro , Hiroaki Yoda
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2011-063286 20110322
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
According to one embodiment, a method of manufacturing a magnetic memory, the method includes forming a first magnetic layer having a variable magnetization, forming a tunnel barrier layer on the first magnetic layer, forming a second magnetic layer on the tunnel barrier layer, the second magnetic layer having an invariable magnetization, forming a hard mask layer as a mask on the second magnetic layer, patterning the second magnetic layer by using the mask of the hard mask layer, and executing a GCIB-irradiation by using the mask of the hard mask layer, after the patterning.
公开/授权文献
- US20120244639A1 METHOD OF MANUFACTURING MAGNETIC MEMORY 公开/授权日：2012-09-27
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