发明授权
US08716089B1 Integrating formation of a replacement gate transistor and a non-volatile memory cell having thin film storage
有权
集成形成替代栅极晶体管和具有薄膜存储的非易失性存储单元
- 专利标题： Integrating formation of a replacement gate transistor and a non-volatile memory cell having thin film storage
- 专利标题（中）： 集成形成替代栅极晶体管和具有薄膜存储的非易失性存储单元
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申请号： US13790225申请日： 2013-03-08
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公开(公告)号： US08716089B1公开(公告)日： 2014-05-06
- 发明人: Mark D. Hall , Frank K. Baker, Jr. , Mehul D. Shroff
- 申请人： Mark D. Hall , Frank K. Baker, Jr. , Mehul D. Shroff
- 申请人地址： US TX Austin
- 专利权人： Freescale Semiconductor, Inc.
- 当前专利权人： Freescale Semiconductor, Inc.
- 当前专利权人地址： US TX Austin
- 代理商 James L. Clingan, Jr.; Joanna G. Chiu
- 主分类号： H01L21/8247
- IPC分类号： H01L21/8247
摘要：
A thermal oxide is formed in an NVM region and a logic region. A polysilicon layer is formed over the thermal oxide and patterned to form a dummy gate and a select gate in the logic and NVM regions, respectively. A first dielectric layer is formed in the NVM and logic regions which surrounds the select gate and dummy gate. The first dielectric layer is removed from the NVM region and protected in the logic region. A charge storage layer is formed over the select gate. The dummy gate is removed, forming an opening. A second dielectric layer is formed over the select gate and within the opening, and a gate layer is formed over the second dielectric layer and within the opening, wherein the gate layer within the opening forms a logic gate and the gate layer is patterned to form a control gate in the NVM region.
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