发明授权
- 专利标题： Method of patterning a semiconductor device
- 专利标题（中）： 图案化半导体器件的方法
-
申请号： US13409863申请日： 2012-03-01
-
公开(公告)号： US08716139B2公开(公告)日： 2014-05-06
- 发明人: George Liu , Kuei Shun Chen , Meng Wei Chen
- 申请人： George Liu , Kuei Shun Chen , Meng Wei Chen
- 申请人地址： TW
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW
- 代理机构： Lowe Hauptman & Ham, LLP
- 主分类号： H01L21/32
- IPC分类号： H01L21/32 ; G03F7/00
摘要：
A method of patterning a semiconductor device including dividing a layout into more than one pattern. The method further includes depositing a film stack on a semiconductor substrate, depositing a hard mask on the film stack, and depositing a first photoresist on the hard mask. The method further includes patterning the first photoresist using a first pattern of the more than one pattern. The method further includes etching the hard mask to transfer a design of the first pattern of the more than one pattern to the hard mask. The method further includes depositing a second photoresist over the etched hard mask and patterning the second photoresist using a second pattern of the more than one pattern. The method further includes etching portions of the film stack exposed by a combination of the etched hard mask and the second photoresist.
公开/授权文献
- US20130230980A1 PHOTORESIST STRUCTURES HAVING RESISTANCE TO PEELING 公开/授权日：2013-09-05
信息查询
IPC分类:
