Invention Grant
- Patent Title: Stable diodes for low and high frequency applications
- Patent Title (中): 用于低频和高频应用的稳定二极管
-
Application No.: US11432836Application Date: 2006-05-11
-
Publication No.: US08716745B2Publication Date: 2014-05-06
- Inventor: Subhas Chandra Bose Jayappa Veeramma
- Applicant: Subhas Chandra Bose Jayappa Veeramma
- Applicant Address: US CA Milpitas
- Assignee: IXYS Corporation
- Current Assignee: IXYS Corporation
- Current Assignee Address: US CA Milpitas
- Agency: Imperium Patent Works
- Main IPC: H01L29/66
- IPC: H01L29/66

Abstract:
A diode is defined on a die. The diode includes a substrate of P conductivity having an upper surface and a lower surface, the substrate having first and second ends corresponding to first and second edges of the die. An anode contacts the lower surface of the substrate. A layer of N conductivity is provided on the upper surface of the substrate, the layer having an upper surface and a lower surface. A doped region of N conductivity is formed at an upper portion of the layer. A cathode contacts the doped region. A passivation layer is provided on the upper surface of the layer and proximate to the cathode.
Public/Granted literature
- US20060255379A1 Stable diodes for low and high frequency applications Public/Granted day:2006-11-16
Information query
IPC分类: