发明授权
US08716759B2 Method to tailor location of peak electric field directly underneath an extension spacer for enhanced programmability of a prompt-shift device
有权
方法可以直接在扩展垫片下方定制峰值电场的位置，以提高快速移位装置的可编程性
- 专利标题： Method to tailor location of peak electric field directly underneath an extension spacer for enhanced programmability of a prompt-shift device
- 专利标题（中）： 方法可以直接在扩展垫片下方定制峰值电场的位置，以提高快速移位装置的可编程性
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申请号： US13430018申请日： 2012-03-26
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公开(公告)号： US08716759B2公开(公告)日： 2014-05-06
- 发明人: Matthew J. Breitwisch , Roger W. Cheek , Jeffrey B. Johnson , Chung H. Lam , Beth A. Rainey , Michael J. Zierak
- 申请人： Matthew J. Breitwisch , Roger W. Cheek , Jeffrey B. Johnson , Chung H. Lam , Beth A. Rainey , Michael J. Zierak
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Scully, Scott, Murphy & Presser, P.C.
- 代理商 Vazken Alexanian
- 主分类号： H01L29/76
- IPC分类号： H01L29/76
摘要：
A prompt-shift device having reduced programming time in the sub-millisecond range is provided. The prompt-shift device includes an altered extension region located within said semiconductor substrate and on at least one side of the patterned gate region, and an altered halo region located within the semiconductor substrate and on at least one side of the patterned gate region. The altered extension region has an extension ion dopant concentration of less than about 1E20 atoms/cm3, and the altered extension region has a halo ion dopant concentration of greater than about 5E18 atoms/cm3. The altered halo region is in direct contact with the altered extension region.