Invention Grant
- Patent Title: Compliant bipolar micro device transfer head
- Patent Title (中): 符合双极微型器件传输头
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Application No.: US14063963Application Date: 2013-10-25
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Publication No.: US08716767B2Publication Date: 2014-05-06
- Inventor: Dariusz Golda , Andreas Bibl
- Applicant: LuxVue Technology Corporation
- Applicant Address: US CA Santa Clara
- Assignee: LuxVue Technology Corporation
- Current Assignee: LuxVue Technology Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely Sokoloff Taylor & Zafman LLP
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L21/266 ; H01L29/06 ; H01L21/02 ; H01L21/329 ; H01L21/331 ; H01L21/336 ; H01L29/66 ; H01L29/78 ; H01L29/872 ; H01L29/40

Abstract:
A compliant bipolar micro device transfer head array and method of forming a compliant bipolar micro device transfer array from an SOI substrate are described. In an embodiment, a compliant bipolar micro device transfer head array includes a base substrate and a patterned silicon layer over the base substrate. The patterned silicon layer may include first and second silicon interconnects, and first and second arrays of silicon electrodes electrically connected with the first and second silicon interconnects and deflectable into one or more cavities between the base substrate and the silicon electrodes.
Public/Granted literature
- US20140048909A1 COMPLIANT BIPOLAR MICRO DEVICE TRANSFER HEAD Public/Granted day:2014-02-20
Information query
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