发明授权
- 专利标题： Bipolar transistor
- 专利标题（中）： 双极晶体管
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申请号： US13124873申请日： 2009-10-16
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公开(公告)号： US08716835B2公开(公告)日： 2014-05-06
- 发明人: Yuji Ando , Hironobu Miyamoto , Tatsuo Nakayama , Yasuhiro Okamoto , Takashi Inoue , Kazuki Ota
- 申请人： Yuji Ando , Hironobu Miyamoto , Tatsuo Nakayama , Yasuhiro Okamoto , Takashi Inoue , Kazuki Ota
- 申请人地址： JP Kawasaki-shi, Kanagawa
- 专利权人： Renesas Electronics Corporation
- 当前专利权人： Renesas Electronics Corporation
- 当前专利权人地址： JP Kawasaki-shi, Kanagawa
- 代理机构： McGinn IP Law Group, PLLC
- 优先权： JP2008-270884 20081021
- 国际申请： PCT/JP2009/067909 WO 20091016
- 国际公布： WO2010/047281 WO 20100429
- 主分类号： H01L29/66
- IPC分类号： H01L29/66 ; H01L29/737 ; H01L29/20
摘要：
A bipolar transistor is provided with an emitter layer, a base layer and a collector layer. The emitter layer is formed above a substrate and is an n-type conductive layer including a first nitride semiconductor. The base layer is formed on the emitter layer and is a p-type conductive including a second nitride semiconductor. The collector layer is formed on the base layer and includes a third nitride semiconductor. The collector layer, the base layer and the emitter layer are formed such that a crystal growth direction to the substrate surface is parallel to a substrate direction of [000-1]. The third nitride semiconductor contains InycAlxcGa1-xc-ycN (0•xc•1, 0•yc•1, 0
公开/授权文献
- US20110278586A1 BIPOLAR TRANSISTOR 公开/授权日：2011-11-17
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