发明授权
- 专利标题: On-chip inductor using redistribution layer and dual-layer passivation
- 专利标题(中): 片上电感使用再分配层和双层钝化
-
申请号: US11443171申请日: 2006-05-31
-
公开(公告)号: US08717137B2公开(公告)日: 2014-05-06
- 发明人: Henry Kuo-Shun Chen , Guang-Jye Shiau , Akira Ito
- 申请人: Henry Kuo-Shun Chen , Guang-Jye Shiau , Akira Ito
- 申请人地址: US CA Irvine
- 专利权人: Broadcom Corporation
- 当前专利权人: Broadcom Corporation
- 当前专利权人地址: US CA Irvine
- 代理机构: Sterne, Kessler, Goldstein & Fox PLLC
- 主分类号: H01F5/00
- IPC分类号: H01F5/00
摘要:
A system and method utilize a redistribution layer in a flip-chip or wirebond package, which is also used to route signals to bumps, as a layer for the construction of an on-chip inductor or a layer of a multiple-layer on-chip inductor. In one example, the redistribution layer is surrounded by dual-layer passivation to protect it, and the inductor formed thereby, from the environment and isolate it, and the inductor formed thereby, from the metal layer beneath it.