发明授权
- 专利标题: NAND flash memory programming
- 专利标题(中): NAND闪存编程
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申请号: US13549743申请日: 2012-07-16
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公开(公告)号: US08717819B2公开(公告)日: 2014-05-06
- 发明人: Seiichi Aritome , Haitao Liu , Di Li
- 申请人: Seiichi Aritome , Haitao Liu , Di Li
- 申请人地址: US ID Boise
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 当前专利权人地址: US ID Boise
- 代理机构: Leffert Jay & Polglaze, P.A.
- 主分类号: G11C11/34
- IPC分类号: G11C11/34
摘要:
A programming method and memory structure for preventing punch-through in a short channel source-side select gate structure includes adjusting voltages on the selected and unselected bitlines, and the program, pass, and select gate voltages.