Invention Grant
- Patent Title: Method for fabricating semiconductor nano circular ring
- Patent Title (中): 制造半导体纳米圆环的方法
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Application No.: US13379752Application Date: 2011-09-09
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Publication No.: US08722312B2Publication Date: 2014-05-13
- Inventor: Ru Huang , Yujie Al , Zhihua Hao , Shuangshuang Pu , Jiewen Fan , Shuai Sun , Runsheng Wang , Xia An
- Applicant: Ru Huang , Yujie Al , Zhihua Hao , Shuangshuang Pu , Jiewen Fan , Shuai Sun , Runsheng Wang , Xia An
- Applicant Address: CN Beijing
- Assignee: Peking University
- Current Assignee: Peking University
- Current Assignee Address: CN Beijing
- Agency: McDermott Will & Emery LLP
- Priority: CN201010506128 20101009
- International Application: PCT/CN2011/079525 WO 20110909
- International Announcement: WO2012/045258 WO 20120412
- Main IPC: G03F7/20
- IPC: G03F7/20

Abstract:
The present invention discloses a method for fabricating a semiconductor nano circular ring. In the method, firstly, a positive photoresist is coated on a semiconductor substrate, then the photoresist is exposed by using a circular mask with a micrometer-sized diameter to obtain the circular ring-shaped photoresist, based on the poisson diffraction principle. Then, a plasma etching is performed on the substrate under a protection of the circular ring-shaped photoresist to form a circular ring-shaped structure with a nano-sized wall thickness on a surface of the substrate. The embodiment of present invention fabricates a nano-sized circular ring-shaped structure by using a micrometer-sized lithography equipment and a micrometer-sized circular mask, and overcomes the dependence on advanced technologies, so as to effectively reduce the fabrication cost of the circular ring-shaped nano structure.
Public/Granted literature
- US20120190202A1 METHOD FOR FABRICATING SEMICONDUCTOR NANO CIRCULAR RING Public/Granted day:2012-07-26
Information query
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