Invention Grant
US08722515B2 Process of treating defects during the bonding of wafers 有权
在晶片接合期间处理缺陷的过程

  • Patent Title: Process of treating defects during the bonding of wafers
  • Patent Title (中): 在晶片接合期间处理缺陷的过程
  • Application No.: US13957623
    Application Date: 2013-08-02
  • Publication No.: US08722515B2
    Publication Date: 2014-05-13
  • Inventor: Chrystelle LagaheBernard Aspar
  • Applicant: Soitec
  • Applicant Address: FR Bernin
  • Assignee: Soitec
  • Current Assignee: Soitec
  • Current Assignee Address: FR Bernin
  • Agency: TraskBritt
  • Priority: FR0850289 20080117
  • Main IPC: H01L21/30
  • IPC: H01L21/30 H01L21/46
Process of treating defects during the bonding of wafers
Abstract:
The invention concerns a process of preparing a thin layer to be transferred onto a substrate having a surface topology and, therefore, variations in altitude or level, in a direction perpendicular to a plane defined by the thin layer, this process comprising the formation on the thin layer of a layer of adhesive material, the thickness of which enables carrying out a plurality of polishing steps of its surface in order to eliminate any defect or void or almost any defect or void, in preparation for an assembly via a molecular kind of bonding with the substrate.
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