Invention Grant
- Patent Title: Process of treating defects during the bonding of wafers
- Patent Title (中): 在晶片接合期间处理缺陷的过程
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Application No.: US13957623Application Date: 2013-08-02
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Publication No.: US08722515B2Publication Date: 2014-05-13
- Inventor: Chrystelle Lagahe , Bernard Aspar
- Applicant: Soitec
- Applicant Address: FR Bernin
- Assignee: Soitec
- Current Assignee: Soitec
- Current Assignee Address: FR Bernin
- Agency: TraskBritt
- Priority: FR0850289 20080117
- Main IPC: H01L21/30
- IPC: H01L21/30 ; H01L21/46

Abstract:
The invention concerns a process of preparing a thin layer to be transferred onto a substrate having a surface topology and, therefore, variations in altitude or level, in a direction perpendicular to a plane defined by the thin layer, this process comprising the formation on the thin layer of a layer of adhesive material, the thickness of which enables carrying out a plurality of polishing steps of its surface in order to eliminate any defect or void or almost any defect or void, in preparation for an assembly via a molecular kind of bonding with the substrate.
Public/Granted literature
- US20130323861A1 PROCESS OF TREATING DEFECTS DURING THE BONDING OF WAFERS Public/Granted day:2013-12-05
Information query
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