公开(公告)号：US08722515B2

公开(公告)日：2014-05-13

申请号：US13957623

申请日：2013-08-02

Applicant: Soitec

Inventor： Chrystelle Lagahe ,  Bernard Aspar

IPC: H01L21/30 ,  H01L21/46

CPC classification number: H01L22/12 ,  H01L21/2007

Abstract: The invention concerns a process of preparing a thin layer to be transferred onto a substrate having a surface topology and, therefore, variations in altitude or level, in a direction perpendicular to a plane defined by the thin layer, this process comprising the formation on the thin layer of a layer of adhesive material, the thickness of which enables carrying out a plurality of polishing steps of its surface in order to eliminate any defect or void or almost any defect or void, in preparation for an assembly via a molecular kind of bonding with the substrate.

Abstract translation: 本发明涉及一种在垂直于由薄层限定的平面的方向上制备要转移到具有表面拓扑结构并因此在高度或水平上的变化的基底上的薄层的方法，该方法包括在 薄层的粘合剂材料层，其厚度能够执行其表面的多个抛光步骤，以便消除任何缺陷或空隙或几乎任何缺陷或空隙，以准备通过分子种类的结合 与基材。

公开(公告)号：US20130323861A1

公开(公告)日：2013-12-05

申请号：US13957623

申请日：2013-08-02

Applicant: Soitec

Inventor： Chrystelle Lagahe ,  Bernard Aspar

IPC: H01L21/66

CPC classification number: H01L22/12 ,  H01L21/2007

Abstract: The invention concerns a process of preparing a thin layer to be transferred onto a substrate having a surface topology and, therefore, variations in altitude or level, in a direction perpendicular to a plane defined by the thin layer, this process comprising the formation on the thin layer of a layer of adhesive material, the thickness of which enables carrying out a plurality of polishing steps of its surface in order to eliminate any defect or void or almost any defect or void, in preparation for an assembly via a molecular kind of bonding with the substrate.

Abstract translation: 本发明涉及一种在垂直于由薄层限定的平面的方向上制备要转移到具有表面拓扑结构并因此在高度或水平上的变化的基底上的薄层的方法，该方法包括在 薄层的粘合剂材料层，其厚度能够执行其表面的多个抛光步骤，以便消除任何缺陷或空隙或几乎任何缺陷或空隙，以准备通过分子种类的结合 与基材。