发明授权
- 专利标题： Light detector with Ge film
- 专利标题（中）： 光电探测器与Ge膜
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申请号： US13595743申请日： 2012-08-27
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公开(公告)号： US08723123B2公开(公告)日： 2014-05-13
- 发明人: Alexander Kalnitsky , Chia-Hua Chu , Fei-Lung Lai , Chun-Wen Cheng , Chun-Ren Cheng , Yi-Hsien Chang
- 申请人： Alexander Kalnitsky , Chia-Hua Chu , Fei-Lung Lai , Chun-Wen Cheng , Chun-Ren Cheng , Yi-Hsien Chang
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater and Matsil, L.L.P.
- 主分类号： G01J5/20
- IPC分类号： G01J5/20
摘要：
A light detector includes a first light sensor and a second light sensor to detect incident light. A Ge film is disposed over the first light sensor to pass infra-red (IR) wavelength light and to block visible wavelength light. The Ge film does not cover the second light sensor.
公开/授权文献
- US20140054461A1 LIGHT DETECTOR WITH GE FILM 公开/授权日：2014-02-27
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