发明授权
- 专利标题： Integration of an amorphous silicon resistive switching device
- 专利标题（中）： 集成非晶硅电阻开关器件
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申请号： US12894057申请日： 2010-09-29
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公开(公告)号： US08723154B2公开(公告)日： 2014-05-13
- 发明人: Sung Hyun Jo , Hagop Nazarian
- 申请人： Sung Hyun Jo , Hagop Nazarian
- 申请人地址： US CA Santa Clara
- 专利权人： Crossbar, Inc.
- 当前专利权人： Crossbar, Inc.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Ogawa P.C.
- 主分类号： H01L29/12
- IPC分类号： H01L29/12 ; H01L29/8605 ; H01L27/105 ; H01L21/8239
摘要：
An integrated circuit device. The integrated circuit device includes a semiconductor substrate having a surface region. A gate dielectric layer overlies the surface region of the substrate. The device includes a MOS device having a p+ active region. The p+ active region forms a first electrode for a resistive switching device. The resistive switching device includes an amorphous silicon switching material overlying the p+ active region and a metal electrode overlies the first metal conductor structure. The metal electrode includes a metal material, upon application of a positive bias to the metal electrode, forms a metal region in the amorphous silicon switching material. The MOS device provides for a select transistor for the integrated circuit device.
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