发明授权
US08723179B2 Thin film transistor panel having an etch stopper on semiconductor
有权
薄膜晶体管板在半导体上具有蚀刻停止层
- 专利标题： Thin film transistor panel having an etch stopper on semiconductor
- 专利标题（中）： 薄膜晶体管板在半导体上具有蚀刻停止层
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申请号： US12957743申请日： 2010-12-01
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公开(公告)号： US08723179B2公开(公告)日： 2014-05-13
- 发明人: Pil-Sang Yun , Ki-Won Kim , Hye-Young Ryu , Woo-Geun Lee , Seung-Ha Choi , Jae-Hyoung Youn , Kyoung-Jae Chung , Young-Wook Lee , Je-Hun Lee , Kap-Soo Yoon , Do-Hyun Kim , Dong-Ju Yang , Young-Joo Choi
- 申请人： Pil-Sang Yun , Ki-Won Kim , Hye-Young Ryu , Woo-Geun Lee , Seung-Ha Choi , Jae-Hyoung Youn , Kyoung-Jae Chung , Young-Wook Lee , Je-Hun Lee , Kap-Soo Yoon , Do-Hyun Kim , Dong-Ju Yang , Young-Joo Choi
- 申请人地址： KR Yongin
- 专利权人： Samsung Display Co., Ltd.
- 当前专利权人： Samsung Display Co., Ltd.
- 当前专利权人地址： KR Yongin
- 代理机构： H.C. Park & Associates, PLC
- 优先权： KR10-2010-0012957 20100211
- 主分类号： H01L29/04
- IPC分类号： H01L29/04 ; H01L31/036 ; H01L31/0376 ; H01L31/20
摘要：
A thin film transistor panel includes an insulating substrate, a gate insulating layer disposed on the insulating substrate, an oxide semiconductor layer disposed on the gate insulating layer, an etch stopper disposed on the oxide semiconductor layer, and a source electrode and a drain electrode disposed on the etch stopper.