发明授权
- 专利标题： Solid-state imaging element
- 专利标题（中）： 固态成像元件
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申请号： US12172571申请日： 2008-07-14
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公开(公告)号： US08723239B2公开(公告)日： 2014-05-13
- 发明人: Hiroyuki Doi , Ryohei Miyagawa , Hitoshi Kuriyama
- 申请人： Hiroyuki Doi , Ryohei Miyagawa , Hitoshi Kuriyama
- 申请人地址： JP Osaka
- 专利权人： Panasonic Corporation
- 当前专利权人： Panasonic Corporation
- 当前专利权人地址： JP Osaka
- 代理机构： McDermott Will & Emery LLP
- 优先权： JP2007-186704 20070718
- 主分类号： H01L31/062
- IPC分类号： H01L31/062 ; H01L31/113
摘要：
A solid-state imaging element includes a photodiode formed in an upper portion of a semiconductor substrate to perform a photoelectric conversion, a silicon dioxide film formed on the substrate to cover the photodiode, and a silicon nitride film formed on the silicon dioxide film. The silicon nitride film has a thinner portion smaller in thickness than at least an end portion of the silicon nitride film entirely or partly over the photodiode.
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