公开(公告)号：US08723239B2

公开(公告)日：2014-05-13

申请号：US12172571

申请日：2008-07-14

申请人： Hiroyuki Doi ,  Ryohei Miyagawa ,  Hitoshi Kuriyama

发明人： Hiroyuki Doi ,  Ryohei Miyagawa ,  Hitoshi Kuriyama

IPC分类号： H01L31/062 ,  H01L31/113

CPC分类号： H01L27/14603 ,  H01L27/14689

摘要： A solid-state imaging element includes a photodiode formed in an upper portion of a semiconductor substrate to perform a photoelectric conversion, a silicon dioxide film formed on the substrate to cover the photodiode, and a silicon nitride film formed on the silicon dioxide film. The silicon nitride film has a thinner portion smaller in thickness than at least an end portion of the silicon nitride film entirely or partly over the photodiode.

摘要翻译： 固态成像元件包括形成在半导体衬底的上部以进行光电转换的光电二极管，形成在衬底上以覆盖光电二极管的二氧化硅膜和形成在二氧化硅膜上的氮化硅膜。 氮化硅膜的厚度比氮化硅膜的至少一端部分薄，部分地比光电二极管的薄。

公开(公告)号：US20060227073A1

公开(公告)日：2006-10-12

申请号：US11372352

申请日：2006-03-10

申请人： Akihiro Okano ,  Hitoshi Kuriyama ,  Takefumi Hama

发明人： Akihiro Okano ,  Hitoshi Kuriyama ,  Takefumi Hama

IPC分类号： G09G3/28

CPC分类号： G09G3/22 ,  G09G2300/026 ,  G09G2320/0285 ,  G09G2320/043 ,  G09G2360/148

摘要： A CCD 14 is disposed on the rear of the discharge cell structures 13, and light introduced from the discharge cell structures 13 to the rear side, or light leaked from the discharge cell structures 13 to the rear side is measured by the CCD 14. Then, the light amount measurement result outputted from the CCD 14 is quantified, and on the basis of this, the brightness correction is automatically performed.

摘要翻译： CCD14设置在放电单元结构13的后面，并且通过CCD 14测量从放电单元结构13向后侧引入的光或从放电单元结构13向后侧泄漏的光。 然后，量化从CCD 14输出的光量测量结果，并且基于此，自动执行亮度校正。

公开(公告)号：US20090020795A1

公开(公告)日：2009-01-22

申请号：US12172571

申请日：2008-07-14

申请人： Hiroyuki DOI ,  Ryohei MIYAGAWA ,  Hitoshi KURIYAMA

发明人： Hiroyuki DOI ,  Ryohei MIYAGAWA ,  Hitoshi KURIYAMA

IPC分类号： H01L31/00 ,  H01L21/00

CPC分类号： H01L27/14603 ,  H01L27/14689

摘要： A solid-state imaging element includes a photodiode formed in an upper portion of a semiconductor substrate to perform a photoelectric conversion, a silicon dioxide film formed on the substrate to cover the photodiode, and a silicon nitride film formed on the silicon dioxide film. The silicon nitride film has a thinner portion smaller in thickness than at least an end portion of the silicon nitride film entirely or partly over the photodiode.

摘要翻译： 固态成像元件包括形成在半导体衬底的上部以进行光电转换的光电二极管，形成在衬底上以覆盖光电二极管的二氧化硅膜和形成在二氧化硅膜上的氮化硅膜。 氮化硅膜的厚度比氮化硅膜的至少一端部分薄，部分地比光电二极管的薄。

公开(公告)号：US20050233516A1

公开(公告)日：2005-10-20

申请号：US11095529

申请日：2005-04-01

申请人： Hidenori Iwadate ,  Hitoshi Kuriyama ,  Masao Yoshizawa

发明人： Hidenori Iwadate ,  Hitoshi Kuriyama ,  Masao Yoshizawa

IPC分类号： H01L21/331 ,  H01L21/8222 ,  H01L21/8238 ,  H01L21/8248 ,  H01L21/8249 ,  H01L27/06 ,  H01L29/732

CPC分类号： H01L21/8249 ,  H01L27/0623 ,  H01L29/732

摘要： In a semiconductor device according to the present invention, an emitter diffusion layer is formed with a polycrystal silison emitter layer serving as a diffusion source, and an impurity concentration of the polycrystal silicon emitter layer is higher than an impurity concentration of the emitter diffusion layer, wherein the emitter diffusion layer is of a shallow junction and an emitter impurity concentration is increased.

摘要翻译： 在根据本发明的半导体器件中，发射扩散层形成多晶硅发射极层作为扩散源，多晶硅发射极层的杂质浓度高于发射极扩散层的杂质浓度， 其中发射极扩散层是浅结，并且发射极杂质浓度增加。