Invention Grant
US08724367B2 Method and apparatus pertaining to a ferroelectric random access memory
有权
涉及铁电随机存取存储器的方法和装置
- Patent Title: Method and apparatus pertaining to a ferroelectric random access memory
- Patent Title (中): 涉及铁电随机存取存储器的方法和装置
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Application No.: US13243875Application Date: 2011-09-23
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Publication No.: US08724367B2Publication Date: 2014-05-13
- Inventor: Michael Patrick Clinton , Steven Craig Bartling , Scott Summerfelt , Hugh McAdams
- Applicant: Michael Patrick Clinton , Steven Craig Bartling , Scott Summerfelt , Hugh McAdams
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Alan A. R. Cooper; W. James Brady, III; Frederick J. Telecky, Jr.
- Main IPC: G11C11/22
- IPC: G11C11/22

Abstract:
An FRAM device can comprise a sense amplifier, at least a first bitcell, a first control line, and a second control line. The first bitcell can have a bit line that connects to the sense amplifier via a first isolator and a complimentary bit line that connects to the sense amplifier via a second isolator that is different from the first isolator. The first control line can connect to and control the aforementioned first isolator. And the second control line can connect to and control the second isolator such that the second isolator is independently controlled with respect to the first isolator to facilitate testing the device.
Public/Granted literature
- US20120170350A1 METHOD AND APPARATUS PERTAINING TO A FERRO-MAGNETIC RANDOM ACCESS MEMORY Public/Granted day:2012-07-05
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