发明授权
US08724367B2 Method and apparatus pertaining to a ferroelectric random access memory
有权
涉及铁电随机存取存储器的方法和装置
- 专利标题： Method and apparatus pertaining to a ferroelectric random access memory
- 专利标题（中）： 涉及铁电随机存取存储器的方法和装置
-
申请号： US13243875申请日： 2011-09-23
-
公开(公告)号： US08724367B2公开(公告)日： 2014-05-13
- 发明人: Michael Patrick Clinton , Steven Craig Bartling , Scott Summerfelt , Hugh McAdams
- 申请人： Michael Patrick Clinton , Steven Craig Bartling , Scott Summerfelt , Hugh McAdams
- 申请人地址： US TX Dallas
- 专利权人： Texas Instruments Incorporated
- 当前专利权人： Texas Instruments Incorporated
- 当前专利权人地址： US TX Dallas
- 代理商 Alan A. R. Cooper; W. James Brady, III; Frederick J. Telecky, Jr.
- 主分类号： G11C11/22
- IPC分类号： G11C11/22
摘要：
An FRAM device can comprise a sense amplifier, at least a first bitcell, a first control line, and a second control line. The first bitcell can have a bit line that connects to the sense amplifier via a first isolator and a complimentary bit line that connects to the sense amplifier via a second isolator that is different from the first isolator. The first control line can connect to and control the aforementioned first isolator. And the second control line can connect to and control the second isolator such that the second isolator is independently controlled with respect to the first isolator to facilitate testing the device.
公开/授权文献
信息查询
