发明授权
US08728711B2 Cleaning reticle, method for cleaning reticle stage, and method for manufacturing semiconductor device
有权
清洁掩模版，清洁掩模版的方法以及制造半导体器件的方法
- 专利标题： Cleaning reticle, method for cleaning reticle stage, and method for manufacturing semiconductor device
- 专利标题（中）： 清洁掩模版，清洁掩模版的方法以及制造半导体器件的方法
-
申请号： US12971468申请日： 2010-12-17
-
公开(公告)号： US08728711B2公开(公告)日： 2014-05-20
- 发明人: Yumi Nakajima , Suigen Kyoh , Ryoichi Inanami
- 申请人： Yumi Nakajima , Suigen Kyoh , Ryoichi Inanami
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- 优先权： JP2009-293859 20091225
- 主分类号： G03F7/20
- IPC分类号： G03F7/20
摘要：
In one embodiment, a method for cleaning a reticle stage of an extreme ultraviolet exposure apparatus is disclosed. The method can include pressing a particle catching layer of a cleaning reticle onto the reticle stage, and the cleaning reticle includes the particle catching layer formed on a substrate. The method can include peeling the cleaning reticle from the reticle stage. The method can include removing the particle catching layer from the substrate. I addition, the method can include forming a new particle catching layer on the substrate having the particle catching layer removed.
公开/授权文献
信息查询
IPC分类:
