发明授权
US08729637B2 Work function adjustment by carbon implant in semiconductor devices including gate structure
有权
通过碳植入在包括栅极结构的半导体器件中进行功能调整
- 专利标题： Work function adjustment by carbon implant in semiconductor devices including gate structure
- 专利标题（中）： 通过碳植入在包括栅极结构的半导体器件中进行功能调整
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申请号： US13253268申请日： 2011-10-05
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公开(公告)号： US08729637B2公开(公告)日： 2014-05-20
- 发明人: Yue Liang , Dechao Guo , William K. Henson , Shreesh Narasimha , Yanfeng Wang
- 申请人： Yue Liang , Dechao Guo , William K. Henson , Shreesh Narasimha , Yanfeng Wang
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Scully, Scott, Murphy & Presser, P.C.
- 代理商 H. Daniel Schnurmann
- 主分类号： H01L21/70
- IPC分类号： H01L21/70 ; H01L21/20 ; H01L21/00
摘要：
A device including a p-type semiconductor device and an n-type semiconductor device on a semiconductor substrate. The n-type semiconductor device includes a gate structure having a high-k gate dielectric. A carbon dopant in a concentration ranging from 1×1016 atoms/cm3 to 1×1021 atoms/cm3 is present at an interface between the high-k gate dielectric of the gate structure for the n-type semiconductor device and the semiconductor substrate. Methods of forming the aforementioned device are also disclosed.
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