发明授权
- 专利标题: Switching device with non-negative biasing
- 专利标题(中): 具有非负偏置的开关器件
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申请号: US13587590申请日: 2012-08-16
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公开(公告)号: US08729952B2公开(公告)日: 2014-05-20
- 发明人: Xiaomin Yang , James P. Furino, Jr.
- 申请人: Xiaomin Yang , James P. Furino, Jr.
- 申请人地址: US OR Hillsboro
- 专利权人: TriQuint Semiconductor, Inc.
- 当前专利权人: TriQuint Semiconductor, Inc.
- 当前专利权人地址: US OR Hillsboro
- 代理机构: Schwabe Williamson & Wyatt
- 主分类号: H03K17/687
- IPC分类号: H03K17/687
摘要:
Embodiments provide a switching device including one or more field-effect transistors (FETs) and bias circuitry. The one or more FETs may transition between an off state and an on state to facilitate switching of a transmission signal. The one or more FETs may include a drain terminal, a source terminal, a gate terminal, and a body. The biasing circuitry may bias the drain terminal and the source terminal to a first DC voltage in the on state and a second DC voltage in the off state. The first and second DC voltages may be non-negative. The biasing circuitry may be further configured to bias the gate terminal to the first DC voltage in the off state and the second DC voltage in the on state.
公开/授权文献
- US20140049311A1 SWITCHING DEVICE WITH NON-NEGATIVE BIASING 公开/授权日:2014-02-20
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