Invention Grant
- Patent Title: Non-conducting zirconium dioxide
- Patent Title (中): 不导电二氧化锆
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Application No.: US13146529Application Date: 2010-01-20
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Publication No.: US08730002B2Publication Date: 2014-05-20
- Inventor: Karlheinz Wienand , Matsvei Zinkevich
- Applicant: Karlheinz Wienand , Matsvei Zinkevich
- Applicant Address: DE Hanau
- Assignee: Heraeus Sensor Technology GmbH
- Current Assignee: Heraeus Sensor Technology GmbH
- Current Assignee Address: DE Hanau
- Agency: Panitch Schwarze Belisario & Nadel LLP
- Priority: DE102009007940 20090206
- International Application: PCT/EP2010/000307 WO 20100120
- International Announcement: WO2010/089024 WO 20100812
- Main IPC: H01C7/02
- IPC: H01C7/02 ; H01C7/04 ; H01C7/06 ; H01C7/00 ; G01K7/18

Abstract:
A resistance thermometer is provided having a measuring resistor in a form of a 0.1 to 10 μm thick structured platinum layer applied to an electrically insulated surface of a substrate and an electrically insulating coating layer covering the platinum layer. The substrate or its surface contains zirconium dioxide, which is stabilized with oxides of a trivalent and a pentavalent metal. Preferably, the trivalent metal is yttrium and the pentavalent metal is tantalum or niobium. The characteristic curve of the measuring resistor preferably conforms to DIN-IEC 751. For mass production of resistance thermometers having high and reproducible measurement accuracy, a structured platinum layer having a thickness of 0.1 to 10 μm is applied to an electrically insulating substrate having a thermal expansion coefficient in the range of 8.5 to 10.5×10−6/° K and a roughness less than 1 μm, and the structured platinum layer is covered by an electrical insulator. The resistance thermometers allow precise temperature measurement between −200° C. and +850° C., preferably as a sensor in an exhaust gas treatment system. In a substance-sensitive sensor having a circuit path structure on a substrate, the circuit path structure has an epitaxially applied base layer, and a substance-sensitive metal layer attached to the epitaxially applied base layer.
Public/Granted literature
- US20110305259A1 NON-CONDUCTING ZIRCONIUM DIOXIDE Public/Granted day:2011-12-15
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