Non-conducting zirconium dioxide
    1.
    发明授权
    Non-conducting zirconium dioxide 有权
    不导电二氧化锆

    公开(公告)号:US08730002B2

    公开(公告)日:2014-05-20

    申请号:US13146529

    申请日:2010-01-20

    摘要: A resistance thermometer is provided having a measuring resistor in a form of a 0.1 to 10 μm thick structured platinum layer applied to an electrically insulated surface of a substrate and an electrically insulating coating layer covering the platinum layer. The substrate or its surface contains zirconium dioxide, which is stabilized with oxides of a trivalent and a pentavalent metal. Preferably, the trivalent metal is yttrium and the pentavalent metal is tantalum or niobium. The characteristic curve of the measuring resistor preferably conforms to DIN-IEC 751. For mass production of resistance thermometers having high and reproducible measurement accuracy, a structured platinum layer having a thickness of 0.1 to 10 μm is applied to an electrically insulating substrate having a thermal expansion coefficient in the range of 8.5 to 10.5×10−6/° K and a roughness less than 1 μm, and the structured platinum layer is covered by an electrical insulator. The resistance thermometers allow precise temperature measurement between −200° C. and +850° C., preferably as a sensor in an exhaust gas treatment system. In a substance-sensitive sensor having a circuit path structure on a substrate, the circuit path structure has an epitaxially applied base layer, and a substance-sensitive metal layer attached to the epitaxially applied base layer.

    摘要翻译: 提供一种电阻温度计,其具有施加到基板的电绝缘表面上的0.1至10μm厚的结构化铂层形式的测量电阻器和覆盖铂层的电绝缘涂层。 基材或其表面含有二氧化锆,其用三价和五价金属的氧化物稳定。 优选地,三价金属是钇,五价金属是钽或铌。 测量电阻器的特性曲线优选符合DIN-IEC 751.对于具有高可重复测量精度的电阻温度计的批量生产,将具有0.1至10μm厚度的结构化铂层施加到具有热 膨胀系数在8.5至10.5×10-6 /°K的范围内,粗糙度小于1μm,并且结构化的铂层被电绝缘体覆盖。 电阻温度计允许在-200℃和+ 850℃之间的精确温度测量,优选地作为废气处理系统中的传感器。 在具有基板上的电路路径结构的物质敏感传感器中,电路路径结构具有外延施加的基极层和附着在外延涂覆的基底层上的物质敏感金属层。

    NON-CONDUCTING ZIRCONIUM DIOXIDE
    2.
    发明申请
    NON-CONDUCTING ZIRCONIUM DIOXIDE 有权
    非导电二氧化锆

    公开(公告)号:US20110305259A1

    公开(公告)日:2011-12-15

    申请号:US13146529

    申请日:2010-01-20

    IPC分类号: G01K7/16 H01C7/02

    摘要: A resistance thermometer is provided having a measuring resistor in a form of a 0.1 to 10 μm thick structured platinum layer applied to an electrically insulated surface of a substrate and an electrically insulating coating layer covering the platinum layer. The substrate or its surface contains zirconium dioxide, which is stabilized with oxides of a trivalent and a pentavalent metal. Preferably, the trivalent metal is yttrium and the pentavalent metal is tantalum or niobium. The characteristic curve of the measuring resistor preferably conforms to DIN-IEC 751. For mass production of resistance thermometers having high and reproducible measurement accuracy, a structured platinum layer having a thickness of 0.1 to 10 μm is applied to an electrically insulating substrate having a thermal expansion coefficient in the range of 8.5 to 10.5×10−6/° K and a roughness less than 1 μm, and the structured platinum layer is covered by an electrical insulator. The resistance thermometers allow precise temperature measurement between −200° C. and +850° C., preferably as a sensor in an exhaust gas treatment system. In a substance-sensitive sensor having a circuit path structure on a substrate, the circuit path structure has an epitaxially applied base layer, and a substance-sensitive metal layer attached to the epitaxially applied base layer.

    摘要翻译: 提供一种电阻温度计,其具有施加到基板的电绝缘表面上的0.1至10μm厚的结构化铂层形式的测量电阻器和覆盖铂层的电绝缘涂层。 基材或其表面含有二氧化锆,其用三价和五价金属的氧化物稳定。 优选地,三价金属是钇,五价金属是钽或铌。 测量电阻器的特性曲线优选符合DIN-IEC 751.对于具有高可重复测量精度的电阻温度计的批量生产,将具有0.1至10μm厚度的结构化铂层施加到具有热 膨胀系数在8.5至10.5×10-6 /°K的范围内,粗糙度小于1μm,并且结构化的铂层被电绝缘体覆盖。 电阻温度计允许在-200℃和+ 850℃之间进行精确的温度测量,优选地作为废气处理系统中的传感器。 在具有基板上的电路路径结构的物质敏感传感器中,电路路径结构具有外延施加的基极层和附着在外延涂覆的基底层上的物质敏感金属层。

    Microstructured hot stamping die
    3.
    发明授权
    Microstructured hot stamping die 有权
    微结构热冲压模具

    公开(公告)号:US09155129B2

    公开(公告)日:2015-10-06

    申请号:US14236385

    申请日:2012-06-27

    摘要: A stamping die for hot stamping a material includes a profiled stamping surface, wherein the stamping die includes at least one thermally insulating substrate, on which an electrically conductive structure having a heating resistor is arranged, and wherein the electrically conductive structure is covered by an electrically insulating film. The surface of the electrically insulating film includes the profiled stamping surface and the electrically insulating film covers at least the heating resistor such that the electrically insulating film with the stamping surface can be electrically heated by the heating resistor. A method for hot stamping a material using such a stamping die includes heating the resistor to a temperature between 100° C. and 800° C.

    摘要翻译: 用于热冲压材料的冲压模具包括异型冲压表面,其中冲压模具包括至少一个绝热基板,其上布置有具有加热电阻器的导电结构,并且其中导电结构被电 绝缘膜。 电绝缘膜的表面包括异形冲压表面,并且电绝缘膜至少覆盖加热电阻器,使得具有冲压表面的电绝缘膜可以被加热电阻器电加热。 使用这种冲压模具热冲压材料的方法包括将电阻器加热到100℃和800℃之间的温度

    MICROSTRUCTURED HOT STAMPING DIE
    4.
    发明申请
    MICROSTRUCTURED HOT STAMPING DIE 有权
    微结构热烫印机

    公开(公告)号:US20140174307A1

    公开(公告)日:2014-06-26

    申请号:US14236385

    申请日:2012-06-27

    IPC分类号: H05B3/28 H05K13/00

    摘要: A stamping die for hot stamping a material includes a profiled stamping surface, wherein the stamping die includes at least one thermally insulating substrate, on which an electrically conductive structure having a heating resistor is arranged, and wherein the electrically conductive structure is covered by an electrically insulating film. The surface of the electrically insulating film includes the profiled stamping surface and the electrically insulating film covers at least the heating resistor such that the electrically insulating film with the stamping surface can be electrically heated by the heating resistor. A method for hot stamping a material using such a stamping die includes heating the resistor to a temperature between 100° C. and 800° C.

    摘要翻译: 用于热冲压材料的冲压模具包括异型冲压表面,其中冲压模具包括至少一个绝热基板,其上布置有具有加热电阻器的导电结构,并且其中导电结构被电 绝缘膜。 电绝缘膜的表面包括异形冲压表面,并且电绝缘膜至少覆盖加热电阻器,使得具有冲压表面的电绝缘膜可以被加热电阻器电加热。 使用这种冲压模具热冲压材料的方法包括将电阻器加热到100℃和800℃之间的温度

    1200° C. film resistor
    5.
    发明授权
    1200° C. film resistor 有权
    1200°C薄膜电阻

    公开(公告)号:US08183974B2

    公开(公告)日:2012-05-22

    申请号:US12237742

    申请日:2008-09-25

    IPC分类号: H01C7/02

    摘要: For production of a high-temperature sensor, in which a platinum resistance film is applied on a metal-oxide substrate, in particular sapphire or a ceramic plate, and a ceramic intermediate layer is laid on the resistance film, a self-supporting cover, in particular a ceramic or glass-ceramic cover, is bonded on the ceramic intermediate layer or a glass ceramic is mounted on the intermediate layer over its entire surface. Advantageously, the glass ceramic is electrically conductive or an ion conductor above 750° C. and is laid on up to the cathode of the resistance film up to beyond the intermediate layer. In particular, the cover is bonded with a metal-doped glass ceramic, which is laid on the cathode of the resistance film up to beyond the intermediate layer. Preferably, the electrically insulating intermediate layer is coated with a glass ceramic or a glass ceramic doped with metal, which coating has a resistance of at most one megaohm per square at 850° C. or above.

    摘要翻译: 为了制造其中在金属氧化物基板上特别是蓝宝石或陶瓷板上施加铂电阻膜的高温传感器,并且在电阻膜上铺设陶瓷中间层,自支撑盖, 特别是陶瓷或玻璃陶瓷覆盖层结合在陶瓷中间层上,或玻璃陶瓷安装在其整个表面上的中间层上。 有利地,玻璃陶瓷是导电的或离子导体高于750℃,并且被放置在直到电阻膜的阴极直到超过中间层。 特别地,覆盖物与掺入金属的玻璃陶瓷结合,该玻璃陶瓷铺设在电阻膜的阴极上,直到超过中间层。 优选地,电绝缘中间层涂覆有掺杂有金属的玻璃陶瓷或玻璃陶瓷,该涂层在850℃或更高温度下具有至多1兆欧每平方厘米的电阻。

    300° C flow sensor
    6.
    发明授权
    300° C flow sensor 有权
    300°C流量传感器

    公开(公告)号:US07963162B2

    公开(公告)日:2011-06-21

    申请号:US12538275

    申请日:2009-08-10

    IPC分类号: G01F1/68

    CPC分类号: G01F1/684 F02M26/47 G01F1/692

    摘要: A measurement device, particularly an anemometric measurement device, is provided for mounting in an exhaust-gas pipe, particularly an exhaust-gas recirculation pipe. The device includes a ceramic carrier embedded in an injection-molded housing made of plastic, with at least one film resistor mounted on the ceramic carrier on an end opposite the embedding. Electrical connections lead out from the film resistor to the embedded end of the ceramic carrier, and the electrical connections are passed through the injection molding, sealed and mounted within the injection-molded part. Additional components can be used for the sealing and mounting.

    摘要翻译: 提供了一种测量装置,特别是一种风速测量装置,用于安装在废气管道,特别是排气再循环管道中。 该装置包括嵌入在由塑料制成的注塑外壳中的陶瓷载体,至少一个膜电阻器安装在陶瓷载体的与嵌入相反的一端上。 电气连接从薄膜电阻引出到陶瓷载体的嵌入端,电连接通过注塑成型,密封并安装在注塑部件内。 附加部件可用于密封和安装。

    Electrical resistance with at least two contact fields on a ceramic
substrate and process for manufacturing the same
    7.
    发明授权
    Electrical resistance with at least two contact fields on a ceramic substrate and process for manufacturing the same 失效
    在陶瓷基板上具有至少两个接触场的电阻及其制造方法

    公开(公告)号:US6159386A

    公开(公告)日:2000-12-12

    申请号:US329561

    申请日:1999-06-10

    摘要: A temperature-dependent measuring resistance with rapid response time is at least partially arranged on an electrically insulating surface of a ceramic substrate, wherein a portion of the conductor path spans a recess situated in the substrate in a bridge-like manner, and the remaining portion of the conductor path in the edge area of the substrate adjacent to the recess is provided with connection contact fields. The conductor path comprises a platinum or gold layer, wherein the conductor path is partially provided with a cover layer of glass, and wherein the connection contact fields are exposed. In a further embodiment, the conductor path is arranged together with the connection contact fields either on a screen-printed glass membrane or on a thin film membrane applied in a PVD process, which covers the surface of the ceramic substrate and spans the recess. The cover layer is likewise selectively applied by screen printing in case there is a glass membrane. In the case of a thin film membrane, the cover layer is also applied selectively by a PVD process and can be the same material as the thin film membrane. The ceramic substrate preferably comprises aluminum oxide.

    摘要翻译: 具有快速响应时间的温度依赖测量电阻至少部分地布置在陶瓷衬底的电绝缘表面上,其中导体路径的一部分以桥状方式跨越位于衬底中的凹部,其余部分 在与凹部相邻的基板的边缘区域中的导体路径设置有连接接触区域。 导体路径包括铂或金层,其中导体路径部分地设置有玻璃覆盖层,并且其中暴露连接接触区域。 在另一个实施例中,导体路径与丝网印刷玻璃膜上的连接接触区域或涂覆在PVD工艺中的薄膜上一起布置,该薄膜膜覆盖陶瓷基板的表面并跨越凹部。 在有玻璃膜的情况下,也可以通过丝网印刷选择性地施加覆盖层。 在薄膜膜的情况下,覆盖层也通过PVD工艺选择性地施加,并且可以是与薄膜膜相同的材料。 陶瓷基板优选包含氧化铝。

    Photolithographic structured thick layer sensor
    8.
    发明授权
    Photolithographic structured thick layer sensor 有权
    光刻结构厚层传感器

    公开(公告)号:US09068913B2

    公开(公告)日:2015-06-30

    申请号:US13319767

    申请日:2010-05-06

    IPC分类号: G01N15/00 G01N15/06

    CPC分类号: G01N15/0656 Y10T29/49002

    摘要: A sensor, particularly an impedance sensor, for example a soot sensor, is provided which has two mutually electrically insulated electrodes, wherein at least one external electrode is formed from a composite of metal and inorganic oxide as a film pattern having a film thickness of 0.5 to 20 μm. The trace width of the film pattern and the spacing between the traces is 5 to 70 μm and the border region around the conductor trace edge varies less than 10 μm. Both electrodes can be arranged adjacent to each other as a film pattern in a plane. Preferably, the sensor has a heater. For mass production, electrodes are produced as a film pattern having a film thickness of 0.5 to 20 μm on electrically insulating oxide bases and, following full-surface imprinting of a metal powder and oxide-containing paste, the electrodes are structured particularly accurately as traces from the printed film. In particular, the film thickness of the printed film is reduced.

    摘要翻译: 提供了一种传感器,特别是阻抗传感器,例如烟灰传感器,其具有两个相互电绝缘的电极,其中至少一个外部电极由金属和无机氧化物的复合物形成,膜厚度为0.5 至20μm。 膜图案的迹线宽度和迹线之间的间距为5〜70μm,导体迹线边缘周围的边界区域变化小于10μm。 两个电极可以彼此相邻地布置为平面中的膜图案。 优选地,传感器具有加热器。 为了大规模生产,电极在电绝缘氧化物基底上作为膜厚度为0.5至20μm的膜图案生产,并且在金属粉末和含氧化物浆料的全表面压印之后,电极被特别精确地构造为痕迹 从印刷电影。 特别地,印刷膜的膜厚减小。

    PHOTOLITHOGRAPHIC STRUCTURED THICK LAYER SENSOR
    9.
    发明申请
    PHOTOLITHOGRAPHIC STRUCTURED THICK LAYER SENSOR 有权
    光刻结构厚层传感器

    公开(公告)号:US20120062254A1

    公开(公告)日:2012-03-15

    申请号:US13319767

    申请日:2010-05-06

    IPC分类号: G01R27/00 H01F41/00 G01M15/10

    CPC分类号: G01N15/0656 Y10T29/49002

    摘要: A sensor, particularly an impedance sensor, for example a soot sensor, is provided which has two mutually electrically insulated electrodes, wherein at least one external electrode is formed from a composite of metal and inorganic oxide as a film pattern having a film thickness of 0.5 to 20 μm. The trace width of the film pattern and the spacing between the traces is 5 to 70 μm and the border region around the conductor trace edge varies less than 10 μm. Both electrodes can be arranged adjacent to each other as a film pattern in a plane. Preferably, the sensor has a heater. For mass production, electrodes are produced as a film pattern having a film thickness of 0.5 to 20 μm on electrically insulating oxide bases and, following full-surface imprinting of a metal powder and oxide-containing paste, the electrodes are structured particularly accurately as traces from the printed film. In particular, the film thickness of the printed film is reduced.

    摘要翻译: 提供了一种传感器,特别是阻抗传感器,例如烟灰传感器,其具有两个相互电绝缘的电极,其中至少一个外部电极由金属和无机氧化物的复合物形成,膜厚度为0.5 至20μm。 膜图案的迹线宽度和迹线之间的间距为5〜70μm,导体迹线边缘周围的边界区域变化小于10μm。 两个电极可以彼此相邻地布置为平面中的膜图案。 优选地,传感器具有加热器。 为了大规模生产,电极在电绝缘氧化物基底上作为膜厚度为0.5至20μm的膜图案生产,并且在金属粉末和含氧化物浆料的全表面压印之后,电极被特别精确地构造为痕迹 从印刷电影。 特别地,印刷膜的膜厚减小。

    Flow sensor element and its self-cleaning
    10.
    发明授权
    Flow sensor element and its self-cleaning 有权
    流量传感器元件及其自洁性

    公开(公告)号:US07739908B2

    公开(公告)日:2010-06-22

    申请号:US12108878

    申请日:2008-04-24

    IPC分类号: G01F1/68

    摘要: A flow sensor element and a method for self-cleaning of the flow sensor element are provided, in which a temperature-measuring element and a heating element are arranged on a carrier element, and these elements can form a multiple-part ceramic component. The temperature-measuring element has a platinum thin-film resistor on a ceramic substrate for the temperature measurement and is heated with an additional platinum thin-film resistor. A measurement device, in particular an anemometric measurement device of a flow sensor, contains film resistors mounted in at least one opening of a cover or a hollow body. Two of the film resistors have resistance values differing by one to three orders of magnitude. The anemometric measurement device has a temperature sensor and a heat output sensor set in a carrier element. The temperature sensor has a temperature-measuring resistor and a heat conductor, as platinum thin-film or thick-film resistors, on a ceramic substrate.

    摘要翻译: 提供了流量传感器元件和流量传感器元件的自清洁方法,其中温度测量元件和加热元件布置在载体元件上,并且这些元件可以形成多部件陶瓷部件。 温度测量元件在陶瓷基板上具有用于温度测量的铂薄膜电阻器,并用附加的铂薄膜电阻器加热。 测量装置,特别是流量传感器的气流测量装置包含安装在盖子或中空体的至少一个开口中的薄膜电阻器。 两个薄膜电阻器的电阻值相差一到三个数量级。 风速测量装置具有设置在载体元件中的温度传感器和热输出传感器。 温度传感器在陶瓷基板上具有温度测量电阻和作为铂薄膜或厚膜电阻的导热体。