Invention Grant
- Patent Title: Electrostatic discharge protection
- Patent Title (中): 静电放电保护
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Application No.: US13252396Application Date: 2011-10-04
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Publication No.: US08730626B2Publication Date: 2014-05-20
- Inventor: Jen-Chou Tseng , Tzu-Heng Chang , Ming-Hsiang Song
- Applicant: Jen-Chou Tseng , Tzu-Heng Chang , Ming-Hsiang Song
- Applicant Address: TW
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW
- Agency: Lowe Hauptman & Ham, LLP
- Main IPC: H02H9/00
- IPC: H02H9/00

Abstract:
A chip includes a first circuit, a second circuit, a first interconnect, and a least one protection circuit. The first circuit has a first node, a first operational voltage node, and a first reference voltage node. The second circuit has a second node, a second operational voltage node, and a second reference voltage node. The first interconnect is configured to electrically connect the first node and the second node to form a 2.5D or a 3D integrated circuit. The at least one protection circuit is located at one or various locations of the chip.
Public/Granted literature
- US20130083436A1 ELECTROSTATIC DISCHARGE PROTECTION Public/Granted day:2013-04-04
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