Invention Grant
- Patent Title: Adjustment of write timing in a memory device
- Patent Title (中): 调整存储设备中的写入时序
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Application No.: US12490454Application Date: 2009-06-24
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Publication No.: US08730758B2Publication Date: 2014-05-20
- Inventor: Ming-Ju Edward Lee , Shadi M. Barakat , Warren Fritz Kruger , Xiaoling Xu , Toan Duc Pham , Aaron John Nygren
- Applicant: Ming-Ju Edward Lee , Shadi M. Barakat , Warren Fritz Kruger , Xiaoling Xu , Toan Duc Pham , Aaron John Nygren
- Applicant Address: US CA Sunnyvale
- Assignee: Advanced Micro Devices, Inc.
- Current Assignee: Advanced Micro Devices, Inc.
- Current Assignee Address: US CA Sunnyvale
- Agency: Sterne, Kessler, Goldstein & Fox P.L.L.C.
- Main IPC: G11C8/18
- IPC: G11C8/18 ; G11C7/22 ; G11C11/4076

Abstract:
A method and system are provided for adjusting a write timing in a memory device. For instance, the method can include receiving a data signal, a write clock signal, and a reference signal. The method can also include detecting a phase shift in the reference signal over time. The phase shift of the reference signal can be used to adjust a phase difference between the data signal and the write clock signal, where the memory device recovers data from the data signal based on an adjusted write timing of the data signal and the write clock signal.
Public/Granted literature
- US20100329045A1 Adjustment of Write Timing in a Memory Device Public/Granted day:2010-12-30
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