Invention Grant
US08735866B2 High-voltage electronic device 有权
高压电子设备

  • Patent Title: High-voltage electronic device
  • Patent Title (中): 高压电子设备
  • Application No.: US13575149
    Application Date: 2011-01-26
  • Publication No.: US08735866B2
    Publication Date: 2014-05-27
  • Inventor: Viktor D. Bochkov
  • Applicant: Viktor D. Bochkov
  • Agent Donn K. Harms
  • Priority: RU2010102657 20100128
  • International Application: PCT/RU2011/000038 WO 20110126
  • International Announcement: WO2011/093746 WO 20110804
  • Main IPC: H01L29/06
  • IPC: H01L29/06 H01L29/12
High-voltage electronic device
Abstract:
A high-voltage electronic device comprising high-voltage electrodes, located in a dielectric envelope with an internal surface coated with a material having a conductivity which is greater than the conductivity of the envelope, characterized in that the areas subject to high field strength are coated with composite material, based on a polycrystalline material with a bulk conductivity of particles 10−9 to 10−13 Ohm−1 cm−1, each of which contains a surface nanolayer of bonding inorganic material. The high-voltage electrodes may be placed in a vacuum envelope and fixed on coated insulators. Preferred coating materials include materials from a group of materials comprising; oxides of chromium, boron or zirconium in the form of polycrystalline porous substance with a particle size of 30 nm-30 microns, connected to each other with an inorganic material, for instance silicon oxide (SiO2) with a layer thickness not more than 100 nm.
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