Invention Grant
US08736014B2 High mechanical strength additives for porous ultra low-k material
有权
用于多孔超低k材料的高机械强度添加剂
- Patent Title: High mechanical strength additives for porous ultra low-k material
- Patent Title (中): 用于多孔超低k材料的高机械强度添加剂
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Application No.: US12271617Application Date: 2008-11-14
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Publication No.: US08736014B2Publication Date: 2014-05-27
- Inventor: Bo-Jiun Lin , Ching-Yu Lo , Hai-Ching Chen , Tien-I Bao , Chen-Hua Yu
- Applicant: Bo-Jiun Lin , Ching-Yu Lo , Hai-Ching Chen , Tien-I Bao , Chen-Hua Yu
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L21/31
- IPC: H01L21/31
Abstract:
A semiconductor device and method for making such that provides improved mechanical strength is disclosed. The semiconductor device comprises a semiconductor substrate; an adhesion layer disposed over the semiconductor substrate; and a porous low-k film disposed over the semiconductor substrate, wherein the porous low-k film comprises a porogen and a composite bonding structure including at least one Si—O—Si bonding group and at least one bridging organic functional group.
Public/Granted literature
- US20100123224A1 HIGH MECHANICAL STRENGTH ADDITIVES FOR POROUS ULTRA LOW-K MATERIAL Public/Granted day:2010-05-20
Information query
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