Invention Grant
- Patent Title: Semiconductor device and method for fabricating the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12493594Application Date: 2009-06-29
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Publication No.: US08736017B2Publication Date: 2014-05-27
- Inventor: Se-Aug Jang , Hong-Seon Yang , Ja-Chun Ku , Seung-Ryong Lee
- Applicant: Se-Aug Jang , Hong-Seon Yang , Ja-Chun Ku , Seung-Ryong Lee
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2009-0007591 20090130
- Main IPC: H01L21/70
- IPC: H01L21/70
Abstract:
A semiconductor device includes a substrate including a trench, a buried gate filling a part of the trench, an inter-layer dielectric layer formed on the buried gate to gap-fill the rest of the trench, and a protection layer covering substantially an entire surface of the substrate including the inter-layer dielectric layer.
Public/Granted literature
- US20100193901A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2010-08-05
Information query
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