发明授权
- 专利标题: Low-resistance conductive pattern structures and methods of fabricating the same
- 专利标题(中): 低电阻导电图案结构及其制造方法
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申请号: US12910356申请日: 2010-10-22
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公开(公告)号: US08736058B2公开(公告)日: 2014-05-27
- 发明人: Byoung-Ho Kwon , Bo-Un Yoon
- 申请人: Byoung-Ho Kwon , Bo-Un Yoon
- 申请人地址: KR Suwon-si
- 专利权人: Samsung Electronics Corporation
- 当前专利权人: Samsung Electronics Corporation
- 当前专利权人地址: KR Suwon-si
- 代理机构: Myers Bigel Sibley & Sajovec, PA
- 优先权: KR10-2009-0103634 20091029
- 主分类号: H01L23/48
- IPC分类号: H01L23/48 ; H01L23/52 ; H01L23/28 ; H01L29/40
摘要:
A conductive structure includes a contact plug extending through an insulating layer on a substrate, and first and second conductive lines extending alongside one another on the insulating layer. The first conductive line extends on the contact plug. A connecting line on the insulating layer extends between and electrically connects the first and second conductive lines. Related integrated circuit devices and fabrication methods are also discussed.
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