Invention Grant
- Patent Title: 3D memory configurable for performance and power
- Patent Title (中): 3D内存可配置为性能和功耗
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Application No.: US13626720Application Date: 2012-09-25
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Publication No.: US08737108B2Publication Date: 2014-05-27
- Inventor: Ruchir Saraswat , Matthias Gries
- Applicant: Ruchir Saraswat , Matthias Gries
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- Main IPC: G11C5/02
- IPC: G11C5/02 ; G11C5/04

Abstract:
A 3D memory that is configurable for performance and power. An embodiment of a memory device includes a dynamic random-access memory (DRAM) including multiple memory dies, each memory die including multiple memory arrays, each memory array including peripheral logic circuits and a configurable logic. The memory device further includes a system element coupled with the DRAM, the system element including a memory controller. The memory controller is to provide for control of the configurable logic to provide for separate or shared peripheral logic circuits for one or more memory arrays, the configurable logic being configurable to enable or disable one or more of the peripheral logic circuits and to enable or disable one or more I/O connections between the memory arrays.
Public/Granted literature
- US20140085959A1 3D MEMORY CONFIGURABLE FOR PERFORMANCE AND POWER Public/Granted day:2014-03-27
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