Micro-electro-mechanical structure (MEMS) capacitor devices, capacitor trimming for MEMS capacitor devices, and design structures are disclosed. The method includes identifying a process variation related to a formation of micro-electro-mechanical structure (MEMS) capacitor devices across a substrate. The method further includes providing design offsets or process offsets in electrode areas of the MEMS capacitor devices across the substrate, based on the identified process variation.