A method for forming semiconductor devices with wafer-level packaging (WLP) includes providing a silicon-on-insulator (SOI) substrate, forming a mask on a silicon layer of the SOI substrate, etching the silicon layer through openings in the mask to form elements initially bonded to but later released from an insulator layer of the SOI substrate, bonding a support substrate to the silicon layer, depositing metal over through holes in the support substrate to contact the silicon layer, and singulating the semiconductor devices from the bonded SOI substrate and the support substrate. The support substrate defines depressions opposite the elements so the elements are not bonded to the support substrate. Each semiconductor device includes a hermetically sealed package having a portion of the SOI substrate and a portion of the support substrate.