Invention Grant
- Patent Title: Electron emitting source and substrate for thin film growth
- Patent Title (中): 用于薄膜生长的电子发射源和衬底
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Application No.: US13415039Application Date: 2012-03-08
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Publication No.: US08742393B2Publication Date: 2014-06-03
- Inventor: Tomofumi Susaki , Hideo Hosono
- Applicant: Tomofumi Susaki , Hideo Hosono
- Applicant Address: JP
- Assignee: Tokyo Institute of Technology
- Current Assignee: Tokyo Institute of Technology
- Current Assignee Address: JP
- Agency: Cantor Colburn LLP
- Priority: JP2011-172319 20110805
- Main IPC: H01L29/06
- IPC: H01L29/06
Abstract:
The SrTiO3 buffer layer is formed by lamination of the Sr2+O2− layer and the Ti4+O24− layer. The surface of the buffer layer is terminated with the Ti4+O24− layer. On the buffer layer, a LaAlO3 thin film layer is formed. The thin film layer includes a La3+O2− layer and an Al3+O24− layer alternately laminated in order on the SrTiO3 buffer layer.
Public/Granted literature
- US20130032778A1 ELECTRON EMITTING SOURCE AND SUBSTRATE FOR THIN FILM GROWTH Public/Granted day:2013-02-07
Information query
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