Invention Grant
US08742438B2 Semiconductor light-emitting device, method for manufacturing the same, and light-emitting apparatus including the same
有权
半导体发光装置及其制造方法以及包括该半导体发光装置的发光装置
- Patent Title: Semiconductor light-emitting device, method for manufacturing the same, and light-emitting apparatus including the same
- Patent Title (中): 半导体发光装置及其制造方法以及包括该半导体发光装置的发光装置
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Application No.: US13711444Application Date: 2012-12-11
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Publication No.: US08742438B2Publication Date: 2014-06-03
- Inventor: Takeshi Kususe , Takahiko Sakamoto
- Applicant: Nichia Corporation
- Applicant Address: JP Anan
- Assignee: Nichia Corporation
- Current Assignee: Nichia Corporation
- Current Assignee Address: JP Anan
- Agency: Smith Patent Office
- Priority: JP2002-225043 20020801; JP2002-256884 20020902
- Main IPC: H01L29/201
- IPC: H01L29/201
Abstract:
A nitride semiconductor light-emitting device includes a layered portion emitting light on a substrate. The layered portion includes an n-type semiconductor layer, an active layer, and a p-type semiconductor layer. The periphery of the layered portion is inclined, and the surface of the n-type semiconductor layer is exposed at the periphery. An n electrode is disposed on the exposed surface of the n-type semiconductor layer. This device structure can enhance the emission efficiency and the light extraction efficiency.
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