发明授权
US08742487B2 Nonvolatile semiconductor memory device provided with charge storage layer in memory cell
有权
在存储单元中设置有电荷存储层的非易失性半导体存储器件
- 专利标题: Nonvolatile semiconductor memory device provided with charge storage layer in memory cell
- 专利标题(中): 在存储单元中设置有电荷存储层的非易失性半导体存储器件
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申请号: US13207149申请日: 2011-08-10
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公开(公告)号: US08742487B2公开(公告)日: 2014-06-03
- 发明人: Kazuhiro Matsuo , Masayuki Tanaka , Takeo Furuhata , Koji Nakahara
- 申请人: Kazuhiro Matsuo , Masayuki Tanaka , Takeo Furuhata , Koji Nakahara
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权: JP2007-323317 20071214; JP2008-008301 20080117; JP2008-127125 20080514; JP2008-136568 20080526
- 主分类号: H01L29/792
- IPC分类号: H01L29/792
摘要:
A nonvolatile semiconductor memory device includes a semiconductor substrate, a first insulation layer formed on the semiconductor substrate, a charge storage layer formed on the first insulation layer, a second insulation layer formed on the charge storage layer and including a first high dielectric insulating film which has a higher relative permittivity than a silicon nitride film and a second high dielectric insulating film which has a higher relative permittivity than a silicon nitride film, the first and second high dielectric insulating films being structured so that a silicon oxide film is interposed between them, a control electrode formed on the second insulation layer, a first portion formed between the charge storage layer and the second insulation layer and containing silicon and nitrogen, and a second portion containing silicon and oxygen and located between the charge storage layer and the second insulation layer.