发明授权
- 专利标题： Storage node, phase change memory device and methods of operating and fabricating the same
- 专利标题（中）： 存储节点，相变存储器件及其操作和制造方法
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申请号： US13348333申请日： 2012-01-11
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公开(公告)号： US08742514B2公开(公告)日： 2014-06-03
- 发明人: Dong-Seok Suh , Tae-Seong Park
- 申请人： Dong-Seok Suh , Tae-Seong Park
- 申请人地址： KR Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： Harness, Dickey & Pierce, P.L.C.
- 优先权： KR10-2005-0102499 20051028
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
A storage node may include a lower electrode, a phase change layer on the lower electrode and an upper electrode on the phase change layer, and the lower electrode and the upper electrode may be composed of thermoelectric materials having a melting point higher than that of the phase change layer, and having different conductivity types. An upper surface of the lower electrode may have a recessed shape, and a lower electrode contact layer may be provided between the lower electrode and the phase change layer.
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