发明授权
US08742580B2 Method of wire bonding over active area of a semiconductor circuit
有权
在半导体电路的有源区上引线键合的方法
- 专利标题: Method of wire bonding over active area of a semiconductor circuit
- 专利标题(中): 在半导体电路的有源区上引线键合的方法
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申请号: US11678600申请日: 2007-02-25
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公开(公告)号: US08742580B2公开(公告)日: 2014-06-03
- 发明人: Jin-Yuan Lee , Ying-Chih Chen , Mou-Shiung Lin
- 申请人: Jin-Yuan Lee , Ying-Chih Chen , Mou-Shiung Lin
- 申请人地址: US CA San Diego
- 专利权人: Megit Acquisition Corp.
- 当前专利权人: Megit Acquisition Corp.
- 当前专利权人地址: US CA San Diego
- 代理机构: Seyfarth Shaw LLP
- 主分类号: H01L23/48
- IPC分类号: H01L23/48
摘要:
A method and structure are provided to enable wire bond connections over active and/or passive devices and/or low-k dielectrics, formed on an Integrated Circuit die. A semiconductor substrate having active and/or passive devices is provided, with interconnect metallization formed over the active and/or passive devices. A passivation layer formed over the interconnect metallization is provided, wherein openings are formed in the passivation layer to an upper metal layer of the interconnect metallization. Compliant metal bond pads are formed over the passivation layer, wherein the compliant metal bond pads are connected through the openings to the upper metal layer, and wherein the compliant metal bond pads are formed substantially over the active and/or passive devices. The compliant metal bond pads may be formed of a composite metal structure.