发明授权
- 专利标题: 3D semiconductor device
- 专利标题(中): 3D半导体器件
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申请号: US13115501申请日: 2011-05-25
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公开(公告)号: US08743582B2公开(公告)日: 2014-06-03
- 发明人: Uk-song Kang , Dong-hyeon Jang , Seong-jin Jang , Hoon Lee , Jin-ho Kim , Nam-seog Kim , Byung-sik Moon , Woo-dong Lee
- 申请人: Uk-song Kang , Dong-hyeon Jang , Seong-jin Jang , Hoon Lee , Jin-ho Kim , Nam-seog Kim , Byung-sik Moon , Woo-dong Lee
- 申请人地址: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- 代理机构: Muir Patent Consulting, PLLC
- 优先权: KR10-2010-0048616 20100525
- 主分类号: G11C5/06
- IPC分类号: G11C5/06
摘要:
A three-dimensional (3D) semiconductor device may include a stack of chips, including a master chip and one or more slave chips. I/O connections of slave chips need not be connected to channels on a motherboard, and only electrode pads of a master chip may be connected to the channels. Only the master chip may provide a load to the channels. A through-substrate via (TSV) boundary may be set on a data input path, a data output path, an address/command path, and/or a clock path of a semiconductor device in which the same type of semiconductor chips are stacked.
公开/授权文献
- US20110292708A1 3D SEMICONDUCTOR DEVICE 公开/授权日:2011-12-01
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