Methods and apparatus are disclosed, including an apparatus that has a memory cell array with a memory cell selectively coupled to a bit line. A control circuit is configured to provide a control signal. A voltage generator is configured to provide a sense signal and a precharge signal in response to the control signal. The apparatus further includes a page buffer configured to provide a bit line voltage to the bit line based on the sense signal and the precharge signal, to thereby control a programming of the memory cell.